IRFZ24VPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET

IRFZ24VPbF
1000
800
600
400
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
200
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 17A
16
12
V_DS = 48V
V_DS = 30V
V_DS = 12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
24
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 175° C
10
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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