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IRFZ24VPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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IRFZ24VPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
EAS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche EnergyÂ
Min. Typ. Max. Units
Conditions
60 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.06 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 60 m⦠VGS = 10V, ID = 10A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
7.8 âââ âââ S VDS = 25V, ID = 10AÂ
âââ âââ 25 µA VDS = 60V, VGS = 0V
âââ âââ 250
VDS = 48V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 23
ID = 17A
âââ âââ 7.7 nC VDS = 48V
âââ âââ 6.2
VGS = 10V, See Fig. 6 and 13
âââ 7.6 âââ
VDD = 30V
âââ 46 âââ ns ID = 17A
âââ 21 âââ
RG = 18â¦
âââ 24 âââ
VGS = 10V, See Fig. 10 Â
Between lead,
D
âââ 4.5 âââ
6mm (0.25in.)
nH from package
G
âââ 7.5 âââ
and center of die contact
S
âââ 590 âââ
VGS = 0V
âââ 140 âââ
VDS = 25V
âââ 23 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 140Â
43 mJ IAS = 17A, L = 300µH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 17
A showing the
integral reverse
G
âââ âââ 68
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 17A, VGS = 0V Â
âââ 53 79 ns TJ = 25°C, IF = 17A
âââ 90 130 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
 ISD ⤠17A, di/dt ⤠240A/µs, VDD ⤠V(BR)DSS,
max. junction temperature. ( See fig. 11 )
TJ ⤠175°C
 Starting TJ = 25°C, L = 300µH
 Pulse width ⤠400µs; duty cycle ⤠2%.
RG = 25â¦, IAS = 17A, VGS=10V (See Figure 12) Â
This is a typical value at device destruction and represents
operation outside rated limits.
 This is a calculated value limited to TJ = 175°C .
2
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