IRFS4010PBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET Power MOSFET

IRFS/SL4010PbF
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.2
0.6
1.0
1.4
1.8
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
200
180
160
140
120
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
1msec
10msec
100µsec
10
DC
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
130
Id = 5mA
125
120
115
110
105
100
95
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP
12.5A
17A
BOTTOM 106A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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