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IRFS4010PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFS/SL4010PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
âââ
RDS(on)
Static Drain-to-Source On-Resistance
âââ
VGS(th)
Gate Threshold Voltage
2.0
IDSS
Drain-to-Source Leakage Current
âââ
âââ
IGSS
Gate-to-Source Forward Leakage
âââ
Gate-to-Source Reverse Leakage
âââ
RG(int)
Internal Gate Resistance
âââ
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
189
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
âââ
Gate-to-Source Charge
âââ
Gate-to-Drain ("Miller") Charge
âââ
Total Gate Charge Sync. (Qg - Qgd)
âââ
Turn-On Delay Time
âââ
Rise Time
âââ
Turn-Off Delay Time
âââ
Fall Time
âââ
Input Capacitance
âââ
Output Capacitance
âââ
Reverse Transfer Capacitance
âââ
h Effective Output Capacitance (Energy Related) âââ
g Effective Output Capacitance (Time Related) âââ
Typ.
âââ
0.10
3.9
âââ
âââ
âââ
âââ
âââ
2.0
Typ.
âââ
143
38
50
93
21
86
100
77
9575
660
270
757
1112
Max. Units
Conditions
âââ
âââ
4.7
4.0
20
250
100
-100
V VGS = 0V, ID = 250µA
 V/°C Reference to 25°C, ID = 5mA
f m⦠VGS = 10V, ID = 106A
V VDS = VGS, ID = 250µA
µA
VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
âââ â¦
Max. Units
Conditions
âââ S VDS = 25V, ID = 106A
215
ID = 106A
f âââ nC VDS = 50V
âââ
VGS = 10V
âââ
ID = 106A, VDS =0V, VGS = 10V
âââ
VDD = 65V
âââ
âââ
âââ
ns
ID = 106A
f RG = 2.7â¦
VGS = 10V
âââ
VGS = 0V
âââ
VDS = 50V
âââ pF Æ = 1.0MHz See Fig.5
âââ
âââ
h VGS = 0V, VDS = 0V to 80V See Fig.11
g VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 180
âââ âââ 720
âââ âââ 1.3
âââ 72 âââ
âââ 81 âââ
âââ 210 âââ
âââ 268 âââ
MOSFET symbol
D
A showing the
integral reverse
G
f p-n junction diode.
S
V TJ = 25°C, IS = 106A, VGS = 0V
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 85V,
f IF = 106A
di/dt = 100A/µs
âââ 5.3 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.057mH
RG = 25â¦, IAS = 106A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠106A, di/dt ⤠1319A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
 Pulse width ⤠400µs; duty cycle ⤠2%.
Â
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 RθJC value shown is at time zero
2
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