IRFS3006-7PPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFS3006-7PPbF
1000
TJ = 175°C
100
TJ = 25°C
10
VGS = 0V
1.0
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
350
Limited By Package
300
250
200
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
2.5
2.0
1.5
1.0
0.5
0.0
0
10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical C_OSS Stored Energy
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
100
10
LIMITED BY PACKAGE
1msec
10msec
DC
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
80
Id = 5mA
75
70
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1400
1200
1000
ID
TOP 35A
70A
BOTTOM 168A
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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