|
IRFS3006-7PPBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
|
◁ |
IRFS3006-7PPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG(int)
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
60
âââ
âââ
2.0
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
0.07
1.5
âââ
âââ
âââ
âââ
âââ
2.1
Max. Units
Conditions
âââ
âââ
2.1
V VGS = 0V, ID = 250µA
d V/°C Reference to 25°C, ID = 5mA
g m⦠VGS = 10V, ID = 168A
4.0
20
250
100
-100
V VDS = VGS, ID = 250µA
µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
âââ â¦
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
gfs
Forward Transconductance
290
Qg
Total Gate Charge
âââ
Qgs
Gate-to-Source Charge
âââ
Qgd
Gate-to-Drain ("Miller") Charge
âââ
Qsync
Total Gate Charge Sync. (Qg - Qgd)
âââ
td(on)
Turn-On Delay Time
âââ
tr
Rise Time
âââ
td(off)
Turn-Off Delay Time
âââ
tf
Fall Time
âââ
Ciss
Input Capacitance
âââ
Coss
Output Capacitance
âââ
Crss
Reverse Transfer Capacitance
âââ
ià Coss eff. (ER) Effective Output Capacitance (Energy Related) âââ
h Coss eff. (TR) Effective Output Capacitance (Time Related)
âââ
Typ.
âââ
200
37
60
140
14
61
118
69
8850
1007
525
1460
1915
Max. Units
Conditions
âââ S VDS = 25V, ID = 168A
300
ID = 168A
g âââ nC VDS = 30V
âââ
VGS = 10V
âââ
ID = 168A, VDS =0V, VGS = 10V
âââ
VDD = 39V
âââ
âââ
âââ
ns
ID = 168A
g RG = 2.7â¦
VGS = 10V
âââ
VGS = 0V
âââ
VDS = 50V
âââ pF Æ = 1.0MHz (See Fig 5)
âââ
âââ
i VGS = 0V, VDS = 0V to 48V (See Fig 11)
h VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
 âââ âââ 293
MOSFET symbol
D
A showing the
integral reverse
G
âââ âââ 1172
p-n junction diode.
S
g âââ âââ 1.3 V TJ = 25°C, IS = 168A, VGS = 0V
âââ
âââ
44
48
âââ
âââ
ns
TJ = 25°C
TJ = 125°C
âââ
âââ
51
62
âââ
âââ
nC
TJ = 25°C
TJ = 125°C
VR = 51V,
g IF = 168A
di/dt = 100A/µs
âââ 2.03 âââ A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 240A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
 Repetitive rating; pulse width limited by max. junction
temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.021mH
RG = 25â¦, IAS = 168A, VGS =10V. Part not recommended for use
above this value .
 ISD ⤠168A, di/dt ⤠1410 A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
2
Â
Pulse width ⤠400µs; duty cycle ⤠2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
 When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniquea refer to applocation
note # AN-994 echniques refer to application note #AN-994.
 Rθ is measured at TJ approximately 90°C
 RθJC value shown is at time zero
www.irf.com
|
▷ |