IRFRU5505 Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

IRFR/U5505
1200
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
1000
C_rss = C_gd
C_oss = C_ds + C_gd
800
Ciss
600
Coss
400
200
Crss
0
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = -9.6A
16
12
V_DS =-44V
V_DS =-28V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
2.2
-V_SD,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
1
1
10
10ms
100
-V_DS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area