IRFRU5505 Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)

IRFR/U5505
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Ciss
C_oss
C_rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-55 ––– –––
––– -0.049 –––
––– ––– 0.11
-2.0 ––– -4.0
4.2 ––– –––
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
––– ––– 32
––– ––– 7.1
––– ––– 15
––– 12 –––
––– 28 –––
––– 20 –––
––– 16 –––
––– 4.5 –––
––– 7.5 –––
––– 650 –––
––– 270 –––
––– 120 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
VGS = -10V, ID = -9.6A „
VDS = VGS, ID = -250µA
VDS = -25V, ID = -9.6A
V_DS = -55V, V_GS = 0V
V_DS = -44V, V_GS = 0V, T_J = 150°C
VGS = 20V
VGS = -20V
ID = -9.6A
V_DS = -44V
V_GS = -10V, See Fig. 6 and 13 „
VDD = -28V
ID = -9.6A
RG = 2.6Ω
R_D = 2.8Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact…
S
VGS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -18
––– ––– -64
––– ––– -1.6
MOSFET symbol
D
A ^{showing the}
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -9.6A, VGS = 0V „
––– 51 77 ns TJ = 25°C, IF = -9.6A
––– 110 160 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 3.2mH
R_G = 25Ω, I_AS = -9.6A. (See Figure 12)
ƒ I_SD ≤ -9.6A, di/dt ≤ 290A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
…This is applied for I-PAK, L_S of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994