IRFR9310PBF Datasheet, PDF (4/10 Pages) International Rectifier – HEXFET POWER MOSFET

IRFR/U9310PbF
500
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
400
C_oss = C_ds + C_gd
300
C_iss
200
C_oss
100
C_rss
0
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = -1.1A}
16
12
V_DS =-320V
V_DS =-200V
V_DS =-80V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
T_J = 150^°C
1
T_J = 25^°C
0.1
1.0
V_GS = 0 V
2.0
3.0
4.0
5.0
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
10us
100us
1
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
10
100
10ms
1000
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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