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IRFR9310PBF Datasheet, PDF (2/10 Pages) International Rectifier – HEXFET POWER MOSFET | |||
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IRFR/U9310PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
-400
ÂÂÂ
ÂÂÂ
-2.0
0.91
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
ÂÂÂ
Typ. Max.
ÂÂÂ ÂÂÂ
-0.41 ÂÂÂ
ÂÂÂ 7.0
ÂÂÂ -4.0
ÂÂÂ ÂÂÂ
ÂÂÂ -100
ÂÂÂ -500
ÂÂÂ 100
ÂÂÂ -100
ÂÂÂ 13
ÂÂÂ 3.2
ÂÂÂ 5.0
11 ÂÂÂ
10 ÂÂÂ
25 ÂÂÂ
24 ÂÂÂ
4.5 ÂÂÂ
7.5 ÂÂÂ
270 ÂÂÂ
50 ÂÂÂ
8.0 ÂÂÂ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -1.1A Â
VDS = VGS, ID = -250µA
VDS = -50V, ID = -1.1A
VDS = -400V, VGS = 0V
VDS = -320V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = -1.1A
VDS = -320V
VGS = -10V, See Fig. 6 and 13 Â
VDD = -200V
ID = -1.1A
RG = 21â¦
RD = 180â¦, See Fig. 10 Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contactÂ
S
VGS = 0V
VDS = -25V
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
ÂÂÂ ÂÂÂ -1.9
A
MOSFET symbol
showing the
D
integral reverse
G
ÂÂÂ ÂÂÂ -7.6
p-n junction diode.
S
  -4.0 V TJ = 25°C, IS = -1.1A, VGS = 0V Â
 170 260 ns TJ = 25°C, IF = -1.1A
 640 960 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 57mH
RG = 25â¦, IAS = -1.8 A. (See Figure 12)
 ISD ⤠-1.1A, di/dt ⤠450A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
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