IRFR430A Datasheet, PDF (4/10 Pages) International Rectifier – SMPS MOSFET

IRFR430A/IRFU430A
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
100
Coss
10
1
1
Crss
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
 12
I^D = 5.0A
10
 ^{VDS = 400V}
V_DS = 250V
V_DS = 100V
7
5
2
0
0
4
8
12
16
20
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
 T_J = 150 ^° C
1
 T_J = 25 ^° C
0.1
0.2
 V GS= 0 V
0.5
0.8
1.1
1.4
V _SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
10msec
1000
VDS , Drain-toSource Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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