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| IRFR430A Datasheet, PDF (2/10 Pages) International Rectifier – SMPS MOSFET | |||
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IRFR430A/IRFU430A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.60 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 1.7 ⦠VGS = 10V, ID = 3.0A Â
2.0 âââ 4.5 V VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
2.3 âââ âââ
Qg
Total Gate Charge
âââ âââ 24
Qgs
Gate-to-Source Charge
âââ âââ 6.5
Qgd
Gate-to-Drain ("Miller") Charge
âââ âââ 13
td(on)
Turn-On Delay Time
âââ 8.7 âââ
tr
Rise Time
âââ 27 âââ
td(off)
Turn-Off Delay Time
âââ 17 âââ
tf
Fall Time
âââ 16 âââ
Ciss
Input Capacitance
âââ 490 âââ
Coss
Output Capacitance
âââ 75 âââ
Crss
Reverse Transfer Capacitance
âââ 4.5 âââ
Coss
Output Capacitance
âââ 750 âââ
Coss
Output Capacitance
âââ 25 âââ
Coss eff. Effective Output Capacitance
âââ 51 âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 250V
ID = 5.0A
RG = 15â¦
RD = 50â¦,See Fig. 10 Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 5.0
A showing the
integral reverse
G
âââ âââ 20
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 5.0A, VGS = 0V Â
âââ 410 620 ns TJ = 25°C, IF = 5.0A
âââ 1.4 2.1 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 11mH
RG = 25â¦, IAS = 5.0A. (See Figure 12)
 ISD ⤠5.0A, di/dt ⤠320A/µs, VDD ⤠V(BR)DSS,
TJ ⤠150°C.
2
 Pulse width ⤠300µs; duty cycle ⤠2%.
Â
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
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