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IRFR3711 Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A④)
IRFR/U3711
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
ID = 30A
8
VDS = 16V
VDS = 10V
6
4
2
0
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 150° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.8
1.4
2.0
2.6
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
10
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
1msec
10msec
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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