IRFR3711 Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)max=6.5mohm, Id=110A④)

IRFR/U3711
Static @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS Drain-to-Source Breakdown Voltage
20
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––
R_DS(on)
–––
Static Drain-to-Source On-Resistance _{–––}
V_GS(th)
Gate Threshold Voltage
1.0
–––
I_DSS
Drain-to-Source Leakage Current
–––
I_GSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.022 –––
5.2 6.5
6.7 8.5
––– 3.0
––– 20
––– 100
––– 200
––– -200
V V_GS = 0V, I_D = 250µA
V/°C Reference to 25°C, I_D = 1mA
mΩ
V_GS = 10V, I_D = 15A ƒ
V_GS = 4.5V, I_D = 12A ƒ
V V_DS = V_GS, I_D = 250µA
µA ^{VDS = 16V, VGS = 0V}
V_DS = 16V, V_GS = 0V, T_J = 125°C
nA ^{VGS = 16V}
V_GS = -16V
Dynamic @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
g_fs
Forward Transconductance
Q_g
Total Gate Charge
53 ––– –––
––– 29 44
S V_DS = 16V, I_D = 30A
I_D = 15A
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
––– 7.3 ––– nC V_DS = 10V
––– 8.9 –––
V_GS = 4.5V ƒ
Q_oss
t_d(on)
Output Gate Charge
Turn-On Delay Time
––– 33 –––
––– 12 –––
V_GS = 0V, V_DS = 10V
V_DD = 10V
t_r
t_d(off)
t_f
C_iss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 220 ––– _ns I_D = 30A
––– 17 –––
R_G = 1.8Ω
––– 12 –––
V_GS = 4.5V ƒ
––– 2980 –––
V_GS = 0V
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
––– 1770 ––– pF V_DS = 10V
––– 280 –––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E_AS
I_AR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
460
30
Units
mJ
A
Diode Characteristics
Symbol
I_S
I_SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 110„
A
showing the
integral reverse
G
––– ––– 440
p-n junction diode.
S
––– 0.88 1.3 V T_J = 25°C, I_S = 30A, V_GS = 0V ƒ
––– 0.82 –––
T_J = 125°C, I_S = 30A, V_GS = 0V ƒ
––– 50 75
––– 61 92
ns T_J = 25°C, I_F = 16A, V_R=10V
nC di/dt = 100A/µs ƒ
––– 48 72
––– 65 98
ns T_J = 125°C, I_F = 16A, V_R=10V
nC di/dt = 100A/µs ƒ
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