IRFR3704PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET

IRFR/U3704PbF
3000
2500
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1500
1000
C_oss
500
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I_D = 28.4A
8
V_DS = 10V
6
4
2
0
0
10
20
30
40
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
1
T_J = 25° C
0.1
0.2
V_GS = 0 V
0.5 0.8 1.1 1.4 1.7 2.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
100us
1ms
10
10ms
T_C = 25° C
T_J = 175° C
Single Pulse
1
0.1
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com