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| IRFR3704PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR/U3704PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ
V(BR)DSS
Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
20 âââ
âââ 0.021
RDS(on)
Static Drain-to-Source On-Resistance
âââ 7.3
âââ 11
VGS(th)
Gate Threshold Voltage
1.0 âââ
âââ âââ
IDSS
Drain-to-Source Leakage Current
âââ âââ
Gate-to-Source Forward Leakage
âââ âââ
IGSS
Gate-to-Source Reverse Leakage
âââ âââ
Max Units
Conditions
âââ V VGS = 0V, ID = 250µA
âââ
9.5
14
V/°C Reference to 25°C, ID = 1mA
ee mâ¦
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
3.0
V VDS = VGS, ID = 250µA
10
100
200
-200
µA VDS = 20V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
gfs
Qg
Qgs
Qgd
QOSS
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
42 âââ âââ
âââ 19 âââ
âââ 8.1 âââ
âââ 6.4 âââ
âââ 16 24
S VDS = 25V, ID = 57A
ID = 28.4A
e nC VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
RG
Gate Resistance
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
0.3 âââ 3.2
âââ 8.4 âââ
âââ 98 âââ
âââ 12 âââ
âââ 5.0 âââ
âââ 1996 âââ
âââ 1085 âââ
âââ 155 âââ
â¦
VDD = 10V
ID = 28.4A
e ns RG = 1.8â¦
VGS = 4.5V
VGS = 0V
pF VDS = 10V
Æ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
d Parameter
Single Pulse Avalanche Energy
ÃÂ Avalanche Current
Typ
Max
Units
âââ
216
mJ
âââ
71
A
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min Typ Max Units
Conditions
f âââ âââ 75
âââ âââ 300
âââ 0.88 1.3
âââ 0.82 âââ
MOSFET symbol
A showing the
integral reverse
V
p-n junction diode.
e TJ = 25°C, IS = 35.5A, VGS = 0V
e TJ = 125°C, IS = 35.5A, VGS = 0V
âââ 38
âââ 45
57
68
e ns TJ = 25°C, IF = 35.5A, VR = 20V
nC di/dt = 100A/µs
âââ 41
âââ 50
62
75
e ns TJ = 125°C, IF = 35.5A, VR= 20V
nC di/dt = 100A/µs
2
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