IRFR3505PBF_15 Datasheet, PDF (4/11 Pages) International Rectifier – Advanced Process Technology

IRFR/U3505PbF
4000
3000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
2000
1000
Coss
Crss
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 30A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs ec
1.0
TJ = 25°C
0.1
0.0
VGS = 0V
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
1ms ec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
10ms ec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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