 English |
|
|
|
|
|
|
|
| IRFR3505PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Process Technology | |||
| |||
|
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
Description
This HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this product are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features
combine to make this design an extremely efficient and
reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
PD - 95511B
IRFR3505PbF
IRFU3505PbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.013â¦
ID = 30A
S
D-Pak
IRFR3505PbF
I-Pak
IRFU3505PbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon limited)
Continuous Drain Current, VGS @ 10V (See Fig.9)
Continuous Drain Current, VGS @ 10V (Package limited)
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyÂ
Single Pulse Avalanche Energy Tested ValueÂ
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
71
49
30
280
140
0.92
± 20
210
410
See Fig.12a, 12b, 15, 16
4.0
-55 to + 175
300 (1.6mm from case )
Thermal Resistance
RθJC
RθJA
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)Â
Junction-to-Ambient
Typ.
âââ
âââ
âââ
Max.
1.09
40
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
09/27/10
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese