IRFR1N60APBF Datasheet, PDF (4/10 Pages) International Rectifier – SMPS MOSFET

IRFR/U1N60APbF
10000
1000
100
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd, C _dsSHORTED
C _rss = C _gd
C _oss= C _ds + C _gd
C_iss
Coss
10
C_rss
1
A
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 1.4A
V_DS = 480V
16
V_DS = 300V
V_DS = 120V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
2
4
6
8 10 12 14
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
T_J = 150° C
1
T_J = 25° C
0.1
0.4
V_GS = 0 V
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
10us
100us
1
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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