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| IRFR1N60APBF Datasheet, PDF (2/10 Pages) International Rectifier – SMPS MOSFET | |||
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IRFR/U1N60APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
600 âââ âââ
âââ âââ 7.0
V VGS = 0V, ID = 250µA
⦠VGS = 10V, ID = 0.84A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
âââ âââ 25
âââ âââ 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 30V
âââ âââ -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
td(on)
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
tr
td(off)
Rise Time
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min.
0.88
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
âââ
9.8
14
18
20
229
32.6
2.4
320
11.5
130
Max.
âââ
14
2.7
8.1
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 0.84A
ID = 1.4A
VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 250V
ID = 1.4A
RG = 2.15â¦
RD = 178â¦,See Fig. 10 Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 480V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 480V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
93
1.4
3.6
Units
mJ
A
mJ
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)Â
Junction-to-Ambient
Diode Characteristics
Typ.
âââ
âââ
âââ
Max.
3.5
50
110
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 1.4
A showing the
integral reverse
G
âââ âââ 5.6
p-n junction diode.
S
âââ âââ 1.6 V TJ = 25°C, IS = 1.4A, VGS = 0V Â
âââ 290 440 ns TJ = 25°C, IF = 1.4A
âââ 510 760 nC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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