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IRFR18N15DPBF Datasheet, PDF (4/11 Pages) International Rectifier – SMPS MOSFET
IRFR/U18N15DPbF
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 11A
16
12
VDS = 120V
VDS = 75V
VDS = 30V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 175° C
1
TJ = 25° C
0.1
0.2
VGS = 0 V
0.5
0.8
1.1
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
TC = 25°C
TJ = 175°C
Single Pulse
1
1
10
1ms
10ms
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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