 English |
|
|
|
|
|
|
|
| IRFR18N15DPBF Datasheet, PDF (2/11 Pages) International Rectifier – SMPS MOSFET | |||
| |||
| ◁ |
IRFR/U18N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Min.
150
âââ
âââ
3.0
âââ
âââ
âââ
âââ
Typ. Max.
âââ âââ
0.17 âââ
âââ 0.125
âââ 5.5
âââ 25
âââ 250
âââ 100
âââ -100
Units
V
V/°C
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA Â
VGS = 10V, ID = 11A Â
VDS = VGS, ID = 250µA
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
4.2 âââ âââ
Qg
Total Gate Charge
âââ 28 43
Qgs
Gate-to-Source Charge
âââ 7.6 11
Qgd
Gate-to-Drain ("Miller") Charge
âââ 14 21
td(on)
Turn-On Delay Time
âââ 8.8 âââ
tr
Rise Time
âââ 25 âââ
td(off)
Turn-Off Delay Time
âââ 15 âââ
tf
Fall Time
âââ 9.8 âââ
Ciss
Input Capacitance
âââ 900 âââ
Coss
Output Capacitance
âââ 190 âââ
Crss
Reverse Transfer Capacitance
âââ 49 âââ
Coss
Output Capacitance
âââ 1160 âââ
Coss
Output Capacitance
âââ 88 âââ
Coss eff. Effective Output Capacitance
âââ 95 âââ
Avalanche Characteristics
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 11A
ID = 11A
VDS = 120V
VGS = 10V, Â
VDD = 75V
ID = 11A
RG = 6.8â¦
VGS = 10V Â
VGS = 0V
VDS = 25V
Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 120V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 120V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
200
11
11
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
âââ
1.4
âââ
50
°C/W
âââ
110
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
MOSFET symbol
D
âââ âââ 18
A showing the
integral reverse
G
âââ âââ 72
p-n junction diode.
S
VSD
Diode Forward Voltage
âââ âââ 1.3 V TJ = 25°C, IS = 11A, VGS = 0V Â
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
âââ 130 190 ns TJ = 25°C, IF = 11A
âââ 660 980 nC di/dt = 100A/µs Â
ton
Forward Turn-On Time
2
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese