IRFR Datasheet, PDF (4/10 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)

IRFR/U120N
600
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
500
C _rss = C _gd
Ciss ^{C oss = C ds + C gd}
400
300
C oss
200
C rss
100
0
A
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = 5.7A
16
V_DS = 80V
V_DS = 50V
V_DS = 20V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 17 5°C
10
TJ = 2 5°C
1
VGS = 0V _A
0.4
0.6
0.8
1.0
1.2
1.4
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OP ER ATIO N IN TH IS A RE A LIM ITED
BY R DS(on)
10µs
10
100µs
1m s
1
10ms
T_C = 25°C
T_J = 175°C
S ing le P u lse
0.1
1
10
100
V_DS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
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