|
IRFR Datasheet, PDF (2/10 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) | |||
|
◁ |
IRFR/U120N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
100 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.12 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 0.21
VGS = 10V, ID = 5.6A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
2.7 âââ âââ S VDS = 25V, ID = 5.7AÂ
âââ âââ 25
âââ âââ 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 25
ID = 5.7A
âââ âââ 4.8 nC VDS = 80V
âââ âââ 11
VGS = 10V, See Fig. 6 and 13 ÂÂ
âââ 4.5 âââ
VDD = 50V
âââ 23 âââ ns ID = 5.7A
âââ 32 âââ
RG = 22â¦
âââ 23 âââ
RD = 8.6â¦, See Fig. 10 ÂÂ
Between lead,
D
âââ 4.5 âââ nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
and center of die contactÂ
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
âââ 330 âââ
âââ 92 âââ
âââ 54 âââ
VGS = 0V
pF VDS = 25V
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ÂÂ
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 9.4
A showing the
integral reverse
G
âââ âââ 38
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 5.5A, VGS = 0V Â
âââ 99 150 ns TJ = 25°C, IF = 5.7A
âââ 390 580 nC di/dt = 100A/µs ÂÂ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 VDD = 25V, starting TJ = 25°C, L = 4.7mH
RG = 25â¦, IAS = 5.7A. (See Figure 12)
 ISD ⤠5.7A, di/dt ⤠240A/µs, VDD â¤V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%
Â
This is applied for I-PAK, Ls of D-PAK is measured between lead and
center of die contact
 Uses IRF520N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
|
▷ |