IRFPS37N50APBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13Ω , ID = 36A )

IRFPS37N50APbF
100000
10000
V _GS = 0V,
f = 1MHz
C_iss = C _gs + C _gd, C _dsSHORTED
C_rss = C _gd
C_oss = C _ds + C _gd
Ciss
1000
C_oss
100
10
1
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
A
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 36A
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 150° C
10
T_J = 25° C
1
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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