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IRFPS37N50APBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.13Ω , ID = 36A ) | |||
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IRFPS37N50APbF
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
500
âââ
2.0
âââ
âââ
âââ
âââ
Typ.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Max.
âââ
0.13
4.0
25
250
100
-100
Units
V
â¦
V
µA
nA
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 22A Â
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 150°C
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
20 âââ âââ S VDS = 50V, ID = 22A
âââ âââ 180
âââ âââ 46
âââ âââ 71
âââ 23 âââ
ID = 36A
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 Â
VDD = 250V
âââ 98 âââ ns ID = 36A
âââ 52 âââ
RG = 2.15â¦
âââ 80 âââ
RD = 7.0â¦,See Fig. 10 Â
âââ 5579 âââ
VGS = 0V
âââ 810 âââ
VDS = 25V
âââ 36 âââ pF Æ = 1.0MHz, See Fig. 5
âââ 7905 âââ
âââ 221 âââ
âââ 400 âââ
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
VGS = 0V, VDS = 400V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 400V Â
Parameter
EAS
Single Pulse Avalanche EnergyÂ
IAR
Avalanche CurrentÂ
EAR
Repetitive Avalanche EnergyÂ
Thermal Resistance
Typ.
âââ
âââ
âââ
Max.
1260
36
44
Units
mJ
A
mJ
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
Typ.
âââ
0.24
âââ
Max.
0.28
âââ
40
Units
°C/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 36
A showing the
integral reverse
G
âââ âââ 144
p-n junction diode.
S
âââ âââ 1.5 V TJ = 25°C, IS = 36A, VGS = 0V Â
âââ 570 860 ns TJ = 25°C, IF = 36A
âââ 8.6 13 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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