IRFP3710PBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY

IRFP3710PbF
6000
5000
4000
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
3000
2000
1000
Coss
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 28A}
16
12
V_DS = 80V
V_DS = 50V
V_DS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
40
80
120
160
200
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175°C
T_J = 25°C
10
1
V_GS = 0V _A
0.4
0.8
1.2
1.6
2.0
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
100
100µs
10
1ms
10ms
T_C = 25°C
T_J = 175°C
Single Pulse
1
1
10
100
V_DS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area