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IRFP3710PBF_15 Datasheet, PDF (2/9 Pages) International Rectifier – ADVANCED PROCESS TECHNOLOGY | |||
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IRFP3710PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100   V VGS = 0V, ID = 250µA
 0.12  V/°C Reference to 25°C, ID = 1mA
  0.025 ⦠VGS = 10V, ID = 28A Â
2.0  4.0 V VDS = VGS, ID = 250µA
20 ÂÂÂ ÂÂÂ S VDS = 25V, ID = 28A
ÂÂÂ ÂÂÂ 25
ÂÂÂ ÂÂÂ 250
µA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
ÂÂÂ ÂÂÂ 100 n A VGS = 20V
ÂÂÂ ÂÂÂ -100
VGS = -20V
ÂÂÂ ÂÂÂ 190
ID = 28A
ÂÂÂ ÂÂÂ 26 nC VDS = 80V
ÂÂÂ ÂÂÂ 82
VGS = 10V, See Fig. 6 and 13 Â
ÂÂÂ 14 ÂÂÂ
VDD = 50V
ÂÂÂ
ÂÂÂ
59 ÂÂÂ
58 ÂÂÂ
ns
ID = 28A
RG = 2.5â¦
ÂÂÂ 48 ÂÂÂ
RD = 1.7â¦, See Fig. 10 Â
ÂÂÂ 4.5 ÂÂÂ
Between lead,
D
6mm (0.25in.)
nH from package
G
ÂÂÂ 7.5 ÂÂÂ
and center of die contact
S
ÂÂÂ 3000 ÂÂÂ
VGS = 0V
ÂÂÂ 640 ÂÂÂ pF VDS = 25V
ÂÂÂ 330 ÂÂÂ
 = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
ÂÂÂ ÂÂÂ 57
MOSFET symbol
A showing the
D
integral reverse
G
ÂÂÂ ÂÂÂ 180
p-n junction diode.
S
ÂÂÂ ÂÂÂ 1.3
ÂÂÂ 210 320
ÂÂÂ 1.7 2.6
V TJ = 25°C, IS = 28A, VGS = 0V Â
ns TJ = 25°C, IF = 28A
µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
 Starting TJ = 25°C, L = 1.4mH
RG = 25â¦, IAS = 28A. (See Figure 12)
 ISD ⤠28A, di/dt ⤠460A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠300µs; duty cycle ⤠2%.
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