IRFP3703 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A⑥)

IRFP3703
14000
12000
10000
8000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
6000
4000
C_oss
2000
0
1
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = 76A
16
V_DS = 24V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 40 80 120 160 200 240 280 320
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
T_J = 25 ° C
1
0.1
0.0
V _GS = 0 V
0.4
0.8
1.2
1.6
2.0
2.4
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
1000
10us
100us
100
1ms
T_C = 25° C
T_J = 175 ° C
10ms
Single Pulse
10
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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