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IRFP3703 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A⑥)
SMPS MOSFET
PD - 93917A
IRFP3703
Applications
l Synchronous Rectification
l Active ORing
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max ID
0.0028Ω
210A†
Benefits
l Ultra Low On-Resistance
l Low Gate Impedance to Reduce Switching
Losses
l Fully Avalanche Rated
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Max.
210 †
100 †
1000
230
3.8
1.5
± 20
5.0
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typical SMPS Topologies
Typ.
–––
0.24
–––
Max.
0.65
–––
40
Units
°C/W
l Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
l Offline High Power AC/DC Convertors using Synchronous Rectification
Notes  through † are on page 8
www.irf.com
1
5/18/01