IRFP360LC Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

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IRFP360LC
6000
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
5000
C_rss = C _gd
C_oss = C_ds + C _gd
4000
C iss
3000
2000
C oss
1000
0
1
Crss
10
100
V _DS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = 23A
16
12
V_DS = 320V
V_DS = 200V
V_DS = 80V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
30
60
90
120
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25°C
1
V_GS = 0V
0
0.4
0.8
1.2
1.6
2
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10µs
100µs
10
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
10ms
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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