IRFP360LC Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

Previous Datasheet
Index
Next Data Sheet
IRFP360LC
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(ON)
V_GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
g_fs
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
400 ––– ––– V V_GS = 0V, ID = 250µA
––– 0.49 ––– V/°C Reference to 25°C, I _D = 1mA
––– ––– 0.20 Ω V_GS = 10V, I_D = 14A
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
13 ––– ––– S V_DS = 50V, I_D = 14A
––– ––– 25 _µA V_DS = 400V, V_GS = 0V
––– ––– 250
V_DS = 320V, V_GS = 0V, T_J = 125°C
––– ––– 100
nA
––– ––– -100
V_GS = 20V
V_GS = -20V
––– ––– 110
I_D = 23A
––– ––– 28 nC V_DS = 320V
––– ––– 45
V_GS = 10V, See Fig. 6 and 13
––– 16 –––
V_DD = 200V
––– 75 ––– _ns I_D = 23A
––– 42 –––
R_G = 4.3Ω
––– 50 –––
R_D = 7.9Ω, See Fig. 10
Between lead,
––– 5.0 –––
nH ^{6mm (0.25in.)}
from package
––– 13 –––
and center of die contact
––– 3400 –––
V_GS = 0V
––– 540 ––– pF V_DS = 25V
––– 42 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 23
showing the
A
integral reverse
––– ––– 92
p-n junction diode.
––– ––– 1.8 V T_J = 25°C, I _S = 23A, V_GS = 0V
––– 400 600 ns T_J = 25°C, I _F = 23A
––– 5.7 8.6 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L _S+L_D)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V_DD = 25V, starting T _J = 25°C, L = 4.0mH
R_G = 25Ω, I_AS = 23A. (See Figure 12)
I_SD ≤ 23A, di/dt ≤ 170A/µs, V _DD ≤ V_(BR)DSS,
T_J ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
To Order