IRFP350LC Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

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IRFP350LC
4000
3000
2000
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
C _iss
C oss
1000
Crss
0
A
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{I D = 16A}
16
12
V_DS = 320V
V_DS = 200V
V_DS = 80V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0.0
VGS = 0V _A
0.4
0.8
1.2
1.6
2.0
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
10
100µs
T_C = 25°C
T_J = 150°C
Single Pulse
1
1
10
1ms
10ms
A
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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