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IRFP350LC Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A) | |||
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IRFP350LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
400 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.49 âââ V/°C Reference to 25°C, I D = 1mA
âââ âââ 0.30 ⦠VGS = 10V, ID = 9.6A
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
8.1 âââ âââ S VDS = 50V, ID = 9.6A
âââ âââ 25 µA VDS = 400V, VGS = 0V
âââ âââ 250
VDS = 320V, VGS = 0V, TJ = 125°C
âââ âââ 100
nA
âââ âââ -100
VGS = 20V
VGS = -20V
âââ âââ 76
ID = 16A
âââ âââ 20 nC VDS = 320V
âââ âââ 37
VGS = 10V, See Fig. 6 and 13
âââ 14 âââ
VDD = 200V
âââ 54 âââ ns ID = 16A
âââ 33 âââ
RG = 6.2â¦
âââ 35 âââ
RD = 12â¦, See Fig. 10
Between lead,
âââ 5.0 âââ
nH 6mm (0.25in.)
from package
âââ 13 âââ
and center of die contact
âââ 2200 âââ
VGS = 0V
âââ 390 âââ pF VDS = 25V
âââ 31 âââ
Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
âââ âââ 16
showing the
A
integral reverse
âââ âââ 64
p-n junction diode.
âââ âââ 1.6 V TJ = 25°C, I S = 16A, VGS = 0V
âââ 440 660 ns TJ = 25°C, I F = 16A
âââ 4.1 6.2 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 2.7mH
RG = 25â¦, IAS = 16A. (See Figure 12)
ISD ⤠16A, di/dt ⤠200A/µs, V DD ⤠V(BR)DSS,
TJ ⤠150°C
Pulse width ⤠300µs; duty cycle ⤠2%.
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