IRFP264N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

IRFP264N
8000
6000
4000
2000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 25A
16
12
V_DS = 200V
V_DS = 125V
V_DS = 50V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175° C
10
1
T_J = 25° C
0.1
0.2
V _GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100µsec
10
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-toSource Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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