IRFP264N Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)

IRFP264N
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
250 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.30 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 60 mΩ V_GS = 10V, I_D = 25A „
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
29 ––– ––– S V_DS = 25V, I_D = 25A„
––– ––– 25 _µA V_DS = 250V, V_GS = 0V
––– ––– 250
V_DS = 200V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 210
I_D = 25A
––– ––– 34 nC V_DS = 200V
––– ––– 94
––– 17 –––
V_GS = 10V, See Fig. 6 and 13
V_DD = 30V
––– 62 ––– _ns I_D = 25A
––– 52 –––
R_G = 1.8Ω
––– 53 –––
V_GS = 10V, See Fig. 10 „
Between lead,
D
––– 5.0 –––
6mm (0.25in.)
nH
from package
G
––– 13 –––
and center of die contact
S
––– 3860 –––
V_GS = 0V
––– 480 –––
V_DS = 25V
––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 44
A ^{showing the}
integral reverse
G
––– ––– 170
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 25A, V_GS = 0V „
––– 270 400 ns T_J = 25°C, I_F = 25A
––– 2.7 4.1 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting T_J = 25°C, L = 1.7mH
R_G = 25Ω, I_AS = 25A,V_GS=10V
2
ƒ I_SD ≤ 25A, di/dt ≤ 500A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
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