IRFP260N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

IRFP260N
8000
7000
6000
5000
4000
3000
2000
1000
0
1
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
10
100
1000
VDS, Drain-to-Source Voltage (V)
16 _{ID = 28A}
12
V _DS= 160V
V _DS= 100V
V _DS= 40V
8
4
0
0
50
100
150
200
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
T_J = 175^° C
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
10
T_J = 25^° C
1
0.1
0.2
V _GS = 0 V
0.6
1.0
1.4
1.8
2.2
V_SD ,Source-to-Drain Voltage (V)
100us
10
1ms
T_C = 25 °C
T_J = 175 °C
Single Pulse
1
1
10
10ms
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 8. Maximum Safe Operating Area
www.irf.com