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IRFP260N Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A) | |||
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IRFP260N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
200
âââ
âââ
2.0
27
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ. Max.
âââ âââ
0.26 âââ
âââ 0.04
âââ 4.0
âââ âââ
âââ 25
âââ 250
âââ 100
âââ -100
âââ 234
âââ 38
âââ 110
17 âââ
60 âââ
55 âââ
48 âââ
5.0 âââ
13 âââ
4057 âââ
603 âââ
161 âââ
Units
V
V/°C
â¦
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 28A Â
VDS = VGS, ID = 250µA
VDS = 50V, ID = 28A Â
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 28A
VDS = 160V
VGS = 10V Â
VDD = 100V
ID = 28A
RG = 1.8â¦
VGS = 10V Â
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
Æ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 50
A showing the
integral reverse
G
âââ âââ 200
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 28A, VGS = 0V Â
âââ 268 402 ns TJ = 25°C, IF = 28A
âââ 1.9 2.8 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Starting TJ = 25°C, L = 1.5mH
RG = 25â¦, IAS = 28A.
 ISD ⤠28A, di/dt ⤠486A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
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