IRFP254N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A)

IRFP254N
4000
3000
2000
1000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 14A
16
V_DS = 200V
V_DS = 125V
V_DS = 50V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 175° C
10
1
T_J = 25 ° C
0.1
0.2
V _GS = 0 V
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
1000
VDS , Drain-toSource Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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