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IRFP254N Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=125mohm, Id=23A) | |||
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IRFP254N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Ciss
Coss
Crss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
250 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.33 âââ V/°C Reference to 25°C, ID = 1mA
âââ âââ 125 m⦠VGS = 10V, ID = 14A Â
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
15 âââ âââ S VDS = 25V, ID = 14AÂ
âââ âââ 25 µA VDS = 250V, VGS = 0V
âââ âââ 250
VDS = 200V, VGS = 0V, TJ = 150°C
âââ âââ 100 nA VGS = 20V
âââ âââ -100
VGS = -20V
âââ âââ 100
ID = 14A
âââ âââ 17
âââ âââ 44
nC VDS = 200V
VGS = 10V, See Fig. 6 and 13
âââ 14 âââ
VDD = 125V
âââ 34 âââ ns ID = 14A
âââ 37 âââ
RG = 3.6â¦
âââ 29 âââ
VGS = 10V, See Fig. 10 Â
Between lead,
D
âââ 5.0 âââ
6mm (0.25in.)
nH
from package
G
âââ 13 âââ
and center of die contact
S
âââ 2040 âââ
âââ 260 âââ
VGS = 0V
VDS = 25V
âââ 62 âââ pF Æ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
âââ âââ 23
A showing the
integral reverse
G
âââ âââ 92
p-n junction diode.
S
âââ âââ 1.3 V TJ = 25°C, IS = 14A, VGS = 0V Â
âââ 210 310 ns TJ = 25°C, IF = 14A
âââ 1.7 2.6 µC di/dt = 100A/µs Â
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
 Starting TJ = 25°C, L = 3.1mH
RG = 25â¦, IAS = 14A,VGS=10V
 ISD ⤠14A, di/dt ⤠460A/µs, VDD ⤠V(BR)DSS,
TJ ⤠175°C
 Pulse width ⤠400µs; duty cycle ⤠2%.
2
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