IRFHS9351PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFHS9351PbF
100
10
TJ = 150°C
1
TJ = 25°C
VGS = 0V
0.1
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
6
5
4
3
2
1
0
25
50
75
100
125
150
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
100
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100μsec
1msec
1
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
0.1
1
DC 10msec
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
2.0
ID = -10uA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage vs. Temperature
10 _{D = 0.50}
0.20
0.10
1
0.05
0.02
0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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