IRFHS9351PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_{GS max}
R_{DS(on) max}
(@V_GS = -10V)
I_D
(@T_C = 25°C)
-30
V
±20
V
170 mΩ
d -3.4
A
PD - 97572B
IRFHS9351PbF
HEXFET^® Power MOSFET
T OP VIEW
S1 1
G1 2
D1
FET1
6 D1
5 G2
D1
G2
S2
D1
D2
D2 3
D2
FET2
4 S2
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low R_DSon (≤ 170mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9351TRPBF
IRFHS9351TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @ T_A = 70°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
c ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 2
www.irf.com
Max.
-30
± 20
-2.3
-1.5
d -5.1
d -4.1
d -3.4
-20
1.4
0.9
0.01
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
7/27/11