IRFHM831PBF_15 Datasheet, PDF (4/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques

IRFHM831PbF
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
50
LIMITED BY PACKAGE
40
1000
100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10msec
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
3.0
2.5
30
20
10
0
25
50
75
100 125 150
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case (Bottom) Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
2.0
ID = 1.0A
1.5 ID = 1.0mA
ID = 250μA
ID = 25μA
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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June 5, 2014