IRFHM831PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques

IRFHM831PbF
HEXFET^® Power MOSFET
V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
30
V
7.8 m:
7.3
nC
0.5
:
40h
A
PQFN 3.3mm x 3.3mm
Applications
• Control MOSFET for Buck Converters
Features and Benefits
Features
Low Charge (typical 7.3nC)
Low Thermal Resistance to PCB (<4.7°C/W)
100% Rg tested
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Switching Losses
Enable Better Thermal Dissipation
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM831TRPbF
IRFHM831TR2PbF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9
Max.
30
±20
14
11
40h
28
96
2.5
27
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
1
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June 5, 2014