IRFH7932TR2PBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFH7932PbF
100000
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
14
ID= 20A
12
10
VDS= 24V
VDS= 15V
8
6
4
2
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 150°C
10
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Source-to-Drain Voltage (V)
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100μsec
1msec
10msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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Fig 8. Maximum Safe Operating Area
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December 16, 2013