IRFH7932TR2PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET

Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
l Very low R_DS(ON) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for R_G
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
V_DSS
30V
IRFH7932PbF
HEXFET^® Power MOSFET
R_DS(on) max
Qg
: 3.3m @V_GS = 10V 34nC
S
D
S
D
S
G
D
D
PQFN
Orderable part number
IRFH7932TRPbF
IRFH7932TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
R_θJC
R_θJA
f^Parameter
Junction-to-Case
g Junction-to-Ambient
Max.
30
± 20
25
20
104
200
3.4
2.2
0.03
-55 to + 150
Typ.
–––
–––
Max.
2.2
37
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
1
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December 16, 2013