IRFBA90N20D Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A⑥)

IRFBA90N20D
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
 12
ID = 59A
10
 ^{VDS = 160V}
V_DS = 100V
V_DS = 40V
7
5
2
0
0
40
80
120
160
200
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5 3.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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