IRFBA90N20D Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A⑥)

IRFBA90N20D
1000
100
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1000
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
1
0.1
0.01
0.1
5.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5.0V
10
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
1.00
0.10
5.0
VDS = 15V
20µs PULSE WIDTH
7.0
9.0
11.0
13.0
15.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
 LIMITED BY PACKAGE
80
60
40
20
0
25
50
75
100
125
150
175
T_C , Case Temperature
( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3