IRFB9N60A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

IRFB9N60A
2400
2000
V _GS = 0V,
f = 1MHz
C _iss = C _gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
C _oss = C_ds + C _gd
C _iss
1600
C oss
1200
800
400
C rss
0
A
1
10
100
1000
V _DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 9.2A
16
12
V_DS = 4800VV
V_DS = 300V
V_DS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25 ° C
0.1
0.2
V_GS = 0 V
0.5
0.7
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25 °C
T_J = 150°C
Single Pulse
0.1
10
100
1000
V_DS, Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
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