IRFB9N60A Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.75ohm, Id=9.2A)

IRFB9N60A
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V_(BR)DSS
∆V(BR)DSS/∆TJ
R_DS(on)
V_GS(th)
g_fs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max. Units
Conditions
600 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.66 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 0.75 Ω V_GS = 10V, I_D = 5.5A „
2.0 ––– 4.0 V V_DS = V_GS, I_D = 250µA
5.5 ––– ––– S V_DS = 25V, I_D = 5.5A
––– ––– 25
––– ––– 250
µA ^{VDS = 600V, VGS = 0V}
V_DS = 480V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 30V
––– ––– -100
V_GS = -30V
––– ––– 49
––– ––– 13
––– ––– 20
––– 13 –––
I_D = 9.2A
nC V_DS = 400V
V_GS = 10V, See Fig. 6 and 13 „
V_DD = 300V
––– 25 ––– _ns I_D = 9.2A
––– 30 –––
R_G = 9.1Ω
––– 22 –––
R_D = 35.5Ω,See Fig. 10 „
Between lead,
D
––– 4.5 –––
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 1400 –––
V_GS = 0V
––– 180 –––
V_DS = 25V
––– 7.1 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 1957 –––
––– 49 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 480V, ƒ = 1.0MHz
––– 96 –––
V_GS = 0V, V_DS = 0V to 480V
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
t_on
Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 6.8mH
R_G = 25Ω, I_AS = 9.2A. (See Figure 12)
ƒ I_SD ≤ 9.2A, di/dt ≤ 50A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 9.2
A ^{showing the}
integral reverse
G
––– ––– 37
p-n junction diode.
S
––– ––– 1.5 V T_J = 25°C, I_S = 9.2A, V_GS = 0V „
––– 530 800 ns T_J = 25°C, I_F = 9.2A
––– 3.0 4.4 µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS
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